Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy

A thermodynamic analysis on the metalorganic vapor-phase epitaxy (MOVPE) of InxGayAl1-x-yN quaternary alloy is performed. The equilibrium partial pres sures of gaseous species at the deposition zone are calculated for various growth conditions. Then, the deposition modes, growth or etching, and the r elationship between solid composition, x and y, and input mole ratios of gr oup III metalorganic sources are studied. It is shown that the growth mode of InGaAlN strongly depends on growth temperature, hydrogen partial pressur e in the carrier gas and input group III partial pressure. Complex behavior between the input mole ratios of group III metalorganic sources and the al loy composition of grown InxGayAl1-x-yN is also clarified. Based on the com pleted deposition diagrams, we can find out the appropriate growth conditio ns for the MOVPE growth of InxGayAl1-x-yN. (C) 2000 Elsevier Science B.V. A ll rights reserved.