Photo EMF behaviour of selected transition metal complexes adsorbed on broad-gap semiconductors

Authors
Kokorakis, A Franzle, S Damm, C Muller, FW Israel, G Hennig, H
Citation
A. Kokorakis et al., Photo EMF behaviour of selected transition metal complexes adsorbed on broad-gap semiconductors, J INF REC, 25(3-4), 2000, pp. 421-425
Citations number
8
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF INFORMATION RECORDING
ISSN journal
10256008 → ACNP
Volume
25
Issue
3-4
Year of publication
2000
Pages
421 - 425
Database
ISI
SICI code
1025-6008(2000)25:3-4<421:PEBOST>2.0.ZU;2-O
Abstract
Photo EMF investigations as described for the first time by Dember are a po werful tool in the detection of charge injection from adsorbates into semic onductors. The Dember effect is used to study charge injections in the cour se of photochemical reactions of various transition metal complexes adsorbe d onto selected semiconductor surfaces. Thus, [IrCl6](2-) and [Fe(CN)(5)(SC N)](3-) for example, show photo-injection of holes, when adsorbed at semico nducting Pb(SCN)(2).