Principle and process window of cerium dioxide thin film fabrication with dual plasma deposition

Cerium dioxide, CeO2, is a potentially superior material in a myriad of are as, acid many methods have been proposed to deposit single crystal CeO2 thi n films. A novel fabrication technique utilizing dual plasma generated by m etal vacuum are (MEVVA) and radio frequency (RF) is discussed in this paper . We have recently conducted a systematic investigation to determine the op timal process window to deposit CeO2 thin films on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposit ed sample.