Capacitance of high-voltage coaxial cable in plasma immersion ion implantation

Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operatio n mode of the high voltage and large slew rate, the capacitance on the high -voltage coaxial cable can be detrimental to the process and cannot be igno red. In fact, a significant portion of the rise-time/fall-time of the impla ntation voltage pulse and big initial current can be attributed to the coax ial cable.