INFLUENCE OF OXYGEN-PRESSURE ON THE PHYSICAL-PROPERTIES OF DC MAGNETRON REACTIVE SPUTTERED CADMIUM-OXIDE FILMS

Thin films of cadmium oxide were deposited onto glass substrates by dc magnetron reactive sputtering from a metallic cadmium target. A syste matic study has been made on the influence of partial pressure of oxyg en ranging from 8 x 10(-5) mbar to 5 x 10(-3) mbar on the film structu re, electrical and optical properties. The dependence of electrical re sistivity, Hall mobility and carrier concentration on the deposition t emperature in the range 348-523 K was reported Ar an optimum partial p ressure of oxygen 1 x 10(-3) mbar and substrate temperature 473 K, the films exhibited a resistivity 4.6 x 10(-3) ohm-cm, Hall mobility 53 c m(2)/V.s, carrier concentration 3.5 x 10(19) cm(-3) with an optical tr ansmission of 85% in the wavelength range 600-1600 nm with a band gap of 2.46 eV. (C) 1997 Elsevier Science Ltd. All rights reserved.