A. Raveh et al., Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: Layer structure and composition, J VAC SCI A, 19(1), 2001, pp. 17-24
Thermally grown silicon dioxide (SiO2) films were nitrided using dual-frequ
ency electron cyclotron resonance (ECR) and rf discharges. The structure an
d composition of the layers were studied by atomic force microscopy, spectr
oscopic ellipsometry, Fourier transform infrared spectroscopy, and Auger el
ectron spectroscopy. A two-layer structure consisting of a silicon oxynitri
de (SiOxNy) outer layer and a SiO2 inner layer was found. The Si-SiO2 inter
face was found to be a suboxide (SiOx, x<2). The ECR/rf plasma mode enabled
production of a more thermally stable structure and composition, when comp
ared to rf plasma alone, due to incorporation of more bonded nitrogen. (C)
2001 American Vacuum Society. [DOI: 10.1116/1.1333084].