Influence of sputtering pressure on physical structure of AIN thin films prepared on Y-128 degrees LiNbO3 by rf magnetron sputtering

C-axis-oriented aluminum nitride (AlN) films were successfully prepared on a Y-128 degrees LiNbO3 substrate by rf magnetron sputtering. The dependence between sputtering pressures and the physical structures of the films (cry stalline structure and micromorphology) was investigated by x-ray diffracti on (XRD) and atomic force microscopy (AFM). The result showed that the high er c-axis-oriented AlN films appeared at lower sputtering pressures and the uneven grain structures existed as multioriented XRD patterns appeared in the high sputtering pressure region (5-9 mTorr). The best orientation and m icrostructure of the films was prepared at 3 mTorr. (C) 2001 American Vacuu m Society. [DOI: 10.1116/1.1323975].