Heteroepitaxial Y2O3 films were grown on oxidized Si(lll) and Si(100) subst
rates by ion assisted evaporation in ultrahigh vacuum. Film qualities such
as the crystallinity, the film strain, and the morphological characteristic
s were investigated using x-ray scattering methods. The crystallinity of th
e films was investigated by reflection of high energy electron diffraction
and x-ray diffraction. The morphological characteristics of the surface and
interface were investigated by x-ray reflection and atomic force microscop
y. From extraction of the interface and surface characteristics with the fi
lm thickness, the structural characteristics of the Y2O3 films grown on the
oxidized Si(lll) showed that a mosaic structure is formed at the interfaci
al area. The mosaic structure was minimized as the film thickness was incre
ased. The morphological coherences between film and substrate, the strain c
hange, and the sharp diffraction peak showed that the film surface of Y2O3(
111) grown on a mosaic structure had a perfect crystalline structure and fl
at surface. This crystalline structure changed into a grain growth structur
e as the film thickness increased. However, the changes in the morphologica
l coherence, the crystallinity, and the strain of the growth system of Y2O3
(110)/Si(100) with the film thickness suggest that the film was grown with
grain like islands in all the thickness ranges. (C) 2001 American Vacuum So
ciety.