Bubbler-based chemical vapor generators find wide application in the fabric
ation of electronic devices. Bubblers generate a carrier-,gas + chemical-va
por mixture to supply the device-processing chamber with reactive chemicals
. The ''dry'' carrier gas bubbles through the liquid source chemical, becom
ing "humidified" with the chemical vapor in the process. This physical-theo
ry-based analysis provides an estimate of the degree of humidification, or
saturation, that the dry carrier gas achieves during bubbling. The "single-
bubble regime" analysis considers the time period from when the bubble pull
s free of the sparger tube, to when the bubble breaks the liquid surface. D
uring this time period liquid evaporates at the bubble edge, and the vapor
then diffuses toward the bubble center. The degree of saturation depends up
on the: vapor diffusivity (D-nu), carrier-gas distribution holes size (D-nu
), liquid surface tension (sigma), liquid density (p(t)), and liquid viscos
ity (nu). Analysis of a bubbler with 0.51 mm N-2 carrier-gas distribution h
ole shows that: the bubbles are approximate to 2 mm in diameter, the bubble
s reach a terminal velocity of approximate to0.24 m/s, with Reynolds number
s in the range of 290-1403. Under these conditions the bubbles reach > 99%
saturation after about 45 ms of liquid exposure, while vertically traversin
g 4-10 mm of the liquid. Sensitivity ratios of the 99% saturation liquid he
ight to a small change in the controlling variables are approximately: 1.5:
1 for vapor diffusivity; [0.93-1.1]:1 for sparger tube hole size, liquid su
rface tension, and liquid density; and 0.1:1 for viscosity. Similar sensiti
vity ratios for the 99% saturation liquid-residence time are: 1:1 for vapor
diffusivity; 0.67:1 for sparger tube hole size, liquid surface tension, an
d liquid density; and 0.0:1 for viscosity. (C) 2001 American Vacuum Society
.