Electronic monolithic interconnect with polyimide

Authors
Moliton, JP Trigaud, T Maziere, B Aubry, C
Citation
Jp. Moliton et al., Electronic monolithic interconnect with polyimide, MAT SC S PR, 3(5-6), 2000, pp. 419-425
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
3
Issue
5-6
Year of publication
2000
Pages
419 - 425
Database
ISI
SICI code
1369-8001(200010/12)3:5-6<419:EMIWP>2.0.ZU;2-T
Abstract
The optimized conditions to obtain supple and monolithic interconnect in PM DA-ODA polyimide are exposed here, by a dry process which makes use of ion irradiations in the 100 keV energy range. The ohmic conditions for direct c urrent conduction are determined. The electrical power dissipated along mil limeter lines is studied. Equivalent electrical parameters for the direct c urrent conduction are calculated. The real thickness of the surface conduct ive layer is clearly determined by physical investigations. (C) 2001 Elsevi er Science Ltd. All rights reserved.