Red vertical cavity lasers (VCSELs) are ideally suited as optical sources f
or plastic optical fibre networks. These networks will form the communicati
on backbone of future automobiles and aircraft replacing the current copper
networks. However VCSELs at these wavelengths are difficult to realise due
to the lower refractive index offsets and unsuitable band structure alignm
ents. The Esprit BREDSELS project has addressed the design, growth and fabr
ication of low threshold red VCSELs. This paper reports the fabrication of
record low threshold (200 muA at 20 degreesC) VCSELs at a wavelength of 665
nm. This device performance has been achieved through the use of selective
oxidation techniques. The devices operate CW to 50 degreesC. The trade off
between low threshold and high power will be discussed. (C) 2001 Elsevier
Science Ltd. All rights reserved.