Fabrication of low-threshold red VCSELs

Citation
Tm. Calvert et al., Fabrication of low-threshold red VCSELs, MAT SC S PR, 3(5-6), 2000, pp. 517-521
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN journal
13698001 → ACNP
Volume
3
Issue
5-6
Year of publication
2000
Pages
517 - 521
Database
ISI
SICI code
1369-8001(200010/12)3:5-6<517:FOLRV>2.0.ZU;2-5
Abstract
Red vertical cavity lasers (VCSELs) are ideally suited as optical sources f or plastic optical fibre networks. These networks will form the communicati on backbone of future automobiles and aircraft replacing the current copper networks. However VCSELs at these wavelengths are difficult to realise due to the lower refractive index offsets and unsuitable band structure alignm ents. The Esprit BREDSELS project has addressed the design, growth and fabr ication of low threshold red VCSELs. This paper reports the fabrication of record low threshold (200 muA at 20 degreesC) VCSELs at a wavelength of 665 nm. This device performance has been achieved through the use of selective oxidation techniques. The devices operate CW to 50 degreesC. The trade off between low threshold and high power will be discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.