Electrophysical measurements for strongly aggressive liquid semiconductors

Citation
Y. Plevachuk et V. Sklyarchuk, Electrophysical measurements for strongly aggressive liquid semiconductors, MEAS SCI T, 12(1), 2001, pp. 23-26
Citations number
14
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
MEASUREMENT SCIENCE & TECHNOLOGY
ISSN journal
09570233 → ACNP
Volume
12
Issue
1
Year of publication
2001
Pages
23 - 26
Database
ISI
SICI code
0957-0233(200101)12:1<23:EMFSAL>2.0.ZU;2-V
Abstract
An original experimental technique for simultaneous electrical conductivity and thermo-e.m.f. measurements in a wide temperature range (up to 2000 K) under high pressures (up to 50 MPa) has been developed. Special ceramic mea suring cells were designed and constructed for investigation of chemically aggressive liquid semiconductors. Different sources of errors connected wit h convective flows, jamming signals, systematic deviation of measuring devi ces and especially diffusion of the liquid sample into the body of the cera mic are analysed and method of elimination are proposed. New results for so me liquid metal-chalcogen alloys in comparison with those obtained earlier illustrate advantages of the proposed method.