InGaPHBTs promise long operating lifetimes

Authors
Lin, B
Citation
B. Lin, InGaPHBTs promise long operating lifetimes, MICROWAV RF, 40(1), 2001, pp. 146
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVES & RF
ISSN journal
07452993 → ACNP
Volume
40
Issue
1
Year of publication
2001
Database
ISI
SICI code
0745-2993(200101)40:1<146:IPLOL>2.0.ZU;2-H
Abstract
LONG life is a design goal for many semiconductor processes. But it is a go al that is apparently well met by a line of gallium-arsenide (GaAs) heteroj unction bipolar transistors (HBTs) from EiC Corp. (Fremont, CA). Fabricated with indium-gallium-phosphide (InGaP) emitters, these GaAs integrated circ uits (ICs) meet the needs of modern, communications systems for smaller die sizes, better reliability, and better device-to-device repeatability.