Atomic-scale quantitative elemental analysis of boundary layers in a SrTiO3 ceramic condenser by high-angle annular dark-field electron microscopy

Atomic-resolution high-angle annular dark-field (HAADF) scanning transmissi on electron microscopy was quantitatively performed for a boundary layer se miconducting SrTiO3 ceramic condenser which has a Bi diffusion layer near t he boundary in each grain. With the aid of HAADF image simulation it was fo und that the Sr sites in the diffusion later are replaced by Bi atoms with a concentration of 14 at.%. In a few lattice layers near the edge of the gr ain, the Bi concentration abruptly increased. The Bi concentration of every Sr or Ti(O) column, along the [001] incident electron beam, was estimated from the simulation taking account of the lattice distortion, which was cau sed as a result of the substitution of Bi atoms, giving a high ratio of Bi to Sr and Ti atoms. It is also concluded that the simulation is indispensab le for HAADF microscopy analysis of a crystal with distorted lattice.