Low-temperature thermal conductivity of high-purity and doped tantalum single crystals after plastic deformation

Citation
W. Wasserbach et al., Low-temperature thermal conductivity of high-purity and doped tantalum single crystals after plastic deformation, PHYS ST S-B, 222(2), 2000, pp. 425-444
Citations number
85
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
222
Issue
2
Year of publication
2000
Pages
425 - 444
Database
ISI
SICI code
0370-1972(200012)222:2<425:LTCOHA>2.0.ZU;2-L
Abstract
The thermal conductivity of plastically deformed, high-purity and doped tan talum single crystals was measured in the temperature range between 50 mK a nd about 2 K. The deformation was performed in such a way that comparable d islocation arrangements and dislocation densities are produced for both, hi gh-purity and doped specimens. Surprisingly, the thermal resistivity W-d du e to plastic deformation depends strongly on the purity of the crystals and the deformation temperature. In the high-purity specimens a thermal resist ivity is observed which is much larger than in the case of doped specimens. This additional thermal resistivity is larger after deformation at inter m ediate temperature than after deformation at low temperatures and has to be attributed to a dynamic interaction between phonons and non-screw dislocat ions. In the present paper the scattering mechanism is related to oscillati ons of geometrical kinks in non-screw dislocations.