Citation
Ad. Yadav et al., Structural and electrical properties of high dose nitrogen implanted tantalum, RADIAT EFF, 153(1), 2000, pp. 25-33
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN journal
10420150
→ ACNP
Volume
153
Issue
1
Year of publication
2000
Pages
25 - 33
Database
ISI
SICI code
1042-0150(2000)153:1<25:SAEPOH>2.0.ZU;2-1
Abstract
High purity tantalum foils were implanted with 20 keV molecular nitrogen io
ns at dose levels varying from 5 x 10(16) to 1 x 10(18) N-2(+) cm(-2). The
Fourier Transform Infrared (FTIR) spectra of the implanted layers show the
formation of tantalum nitrides of different structures depending on the tot
al ion dose. The X-Ray Diffraction (XRD) studies show the formation of Ta2N
and TaN0.8 at all doses and TaN at higher doses (5 x 10(17) to 1 x 10(18)
N(2)(+)cm(-2)). The FTIR, XRD and electrical studies show sputter limited m
aximum nitride concentrations.