Chemical dynamics of equivalent to SiOC center dot O radicals grafted on the activated silica surface

Authors
Pergushov, VI Kuimova, MK
Citation
Vi. Pergushov et Mk. Kuimova, Chemical dynamics of equivalent to SiOC center dot O radicals grafted on the activated silica surface, RUSS CHEM B, 49(11), 2000, pp. 1834-1837
Citations number
17
Categorie Soggetti
Chemistry
Journal title
RUSSIAN CHEMICAL BULLETIN
ISSN journal
10665285 → ACNP
Volume
49
Issue
11
Year of publication
2000
Pages
1834 - 1837
Database
ISI
SICI code
1066-5285(200011)49:11<1834:CDOETS>2.0.ZU;2-3
Abstract
The chemical dynamics of =(SiOCO)-O-. radicals grafted on the silica surfac e was studied in the 77-290 K temperature interval. The rotation diffusion coefficients and characteristic times of rotational mobility of the radical s were estimated.