Deep-level electroluminescence at 3.5 mu m from semi-insulating InP layersion implanted with Fe

Authors
Troccoli, M Scamarcio, G Fraboni, B Priolo, F Gasparotto, A
Citation
M. Troccoli et al., Deep-level electroluminescence at 3.5 mu m from semi-insulating InP layersion implanted with Fe, SEMIC SCI T, 16(1), 2001, pp. L1-L3
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
1
Year of publication
2001
Pages
L1 - L3
Database
ISI
SICI code
0268-1242(200101)16:1<L1:DEA3MM>2.0.ZU;2-L
Abstract
Mid-infrared electroluminescence associated with internal transitions of Fe 2+ deep levels in semi-insulating InP:Fe layers, obtained by ion implantati on at high doses in the range 10(13)-10(15) cm(-2), is reported. The charac teristic line spectrum corresponding to the symmetry-allowed d-shell transi tions of Fe2+ can be observed up to 30 K, while a broader band emission is detectable up to 200 K. The estimated conversion efficiency of electrical i nto mid-IR optical power is similar to4 x 10(-5), a factor of similar to 40 larger than previously reported values in MOCVD-grown planar electrolumine scent devices.