Characterization of focused ion beam induced deposition process and parameters calibration

Deposition of metal or insulator by focused ion beam (FIB) technology is ve ry useful for microsensor fabrication, IC chip modification and failure ana lysis. Characteristics of depositing tungsten is studied, and physical mode l is put forth in this paper. The deposition quality of the deposited layer was analyzed by varying operating parameters, such as dwell time, beam spo t size, beam current and refresh time. By analyzing the experimental result s, optimum parameters are derived for deposition process so as to provide e xperimental basis for actual application in the future. It is verified by t he results that the physical model is in accordance with actual operation c ondition. (C) 2001 Elsevier Science B.V. All rights reserved.