Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells

Citation
Nj. Ekins-daukes et al., Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells, SOL EN MAT, 68(1), 2001, pp. 71-87
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
68
Issue
1
Year of publication
2001
Pages
71 - 87
Database
ISI
SICI code
0927-0248(200104)68:1<71:SASQWD>2.0.ZU;2-2
Abstract
The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell established. The strain-balance approach is sug gested as a means of overcoming the limits inherent to the strained approac h and the principle is demonstrated in two differing device configurations. The strain-balance devices show enhanced efficiencies over their strained counterparts and in one case, comparable efficiency to a good GaAs control cell. The application of these cells to tandem structures is discussed, ind icating the potential for a substantial efficiency enhancement. (C) 2001 El sevier Science B.V. All rights reserved.