Large-area CIGS absorbers prepared by physical vapor deposition

Citation
T. Negami et al., Large-area CIGS absorbers prepared by physical vapor deposition, SOL EN MAT, 67(1-4), 2001, pp. 1-9
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
1 - 9
Database
ISI
SICI code
0927-0248(200103)67:1-4<1:LCAPBP>2.0.ZU;2-J
Abstract
An in-line process for deposition of Cu(In,Ga)Se-2 (CIGS) films on 10 x 10 cm(2) substrates has been developed in order to fabricate high-efficiency C IGS modules. At the first step, CIGS solar cells with a small area were fab ricated by the in-line evaporation. The cells on different positions in 10 x 10 cm(2) area showed almost the same efficiency of over 14%. Twelve cells on a substrate of 5 x 10 cm(2) size showed an average efficiency of about 13%. Device-quality CIGS films can be prepared by the in-line evaporation. Furthermore, interconnected CIGS submodules were fabricated on 10 x 10 cm(2 ) size substrates. The CIGS submodule has achieved an efficiency of 10.5%. The segmental cells in the submodule showed an average open-circuit voltage higher than 0.6 V, comparable to that of a high-efficiency cell with a lab oratory size. (C) 2001 Elsevier Science B.V. All rights reserved.