Progress in large-area Cu(InGa)Se-2-based thin-film modules with a Zn(O,S,OH)(x) buffer layer

Applying basically the same innovative and robust fabrication technologies which, for the first time, led to the achievement of remarkably high effici ency of 14.2% at an aperture area of 51.7cm(2) with a Zn(O,S,OH)(x) buffer layer, the following goals have been targeted: (1) 13% efficiency on a 30cm x 30cm module and (2) establishment of the fabrication technologies to att ain 140 yen/W-p in the annual production capacity of 100MW(p)/a. The main f ocus is currently on the technology development (1) to increase the V-oc re lated to the CIGS absorber and (2) to improve the J(sc) related to the DC-s puttered ZnO window layer with a multilayered structure. This contribution well explains the status and strategy of Showa Shell Sekiyu K.K. on the R&D of CIGS-based thin-film modules to achieve the above two goals by the end of FY2000. (C) 2001 Elsevier Science B.V. All rights reserved.