Baseline Cu(In,Ga)Se-2 device production: Control and statistical significance

Authors
Kessler, J Bodegard, M Hedstrom, J Stolt, L
Citation
J. Kessler et al., Baseline Cu(In,Ga)Se-2 device production: Control and statistical significance, SOL EN MAT, 67(1-4), 2001, pp. 67-76
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
67 - 76
Database
ISI
SICI code
0927-0248(200103)67:1-4<67:BCDPCA>2.0.ZU;2-D
Abstract
Small- and-large area Cu(In,Ga)Se-2- based solar cells, as well as 20 cm(2) mini-modules are produced using a "baseline" approach that privileges proc ess simplicity and statistical significance. High-quality devices are contr ollably obtained, as well as a 14.7% world record mini-module. Both "grided " and "conventional" mini-modules are produced and compared. A few processe s from our research areas are presented as candidates for baseline integrat ion. Among these, the examples of "fast" CIGS and "thin" CIGS are shown. Fo r the latter, Ga-grading is involved and fill factors above 81% have been m easured. (C) 2001 Elsevier Science B.V. All rights reserved.