Theoretical analysis of the effect of conduction band offset of window/CISlayers on performance of CIS solar cells using device simulation

Authors
Minemoto, T Matsui, T Takakura, H Hamakawa, Y Negami, T Hashimoto, Y Uenoyama, T Kitagawa, M
Citation
T. Minemoto et al., Theoretical analysis of the effect of conduction band offset of window/CISlayers on performance of CIS solar cells using device simulation, SOL EN MAT, 67(1-4), 2001, pp. 83-88
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
83 - 88
Database
ISI
SICI code
0927-0248(200103)67:1-4<83:TAOTEO>2.0.ZU;2-6
Abstract
One of the most important factors of CdS leading to high performance in Cu( In,Ga)Se-2 (CIGS) solar cells is appropriation of the conduction band offse t of CdS/CIGS layers. However, it is not clearly explained. In this study, device modeling and simulation were conducted to explain the effect of cond uction band offset of window/CIGS layers on performance of CIGS solar cells . As a result of calculation, excellent performance can be obtained when th e conduction band of window layer positions higher by 0-0.4eV than that of CIGS. (C) 2001 Elsevier Science B.V. All rights reserved.