CVD of CuGaSe2 for thin film solar cells with various transport agents

Chemical vapor deposition (CVD) in an open tube system was employed to depo sit single-phase CuGaSe2 thin films on plain and Mo-coated glass substrates . The use of HCl and ternary CuGaSe2 source material resulted in non-stoich iometric volatilization of the source material. The use of binary source ma terials - Cu2Se and Ga2Se3 - in combination with I-2 and HCl as the respect ive transport agents yielded single-phase CuGaSe2 thin films while the sour ce materials were volatilized stoichiometrically. Mo/CuGaSe2/CdS/ZnO device s were fabricated from these samples exhibiting an open-circuit voltages up to V-oc = 853 mV. (C) 2001 Elsevier Science B.V. All rights reserved.