Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy

Authors
Yoshino, K Mitani, N Ikari, T Fons, PJ Niki, S Yamada, A
Citation
K. Yoshino et al., Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy, SOL EN MAT, 67(1-4), 2001, pp. 173-178
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
173 - 178
Database
ISI
SICI code
0927-0248(200103)67:1-4<173:OPOHCE>2.0.ZU;2-W
Abstract
The piezoelectric photoacoustic (PPA) signals for Cu-rich CuGaSe2 (CGS) /Ga As (001) epitaxial layer(Cu/Ga = 1.09-2.16) grown by molecular beam epitaxy (MBE) were successfully obtained at liquid-nitrogen temperature. The bandg ap energies of CGS (A-band) decreased and GaAs was not almost changed with increasing the Cu/Ga ratios. This phenomenon was very similar to that of fr ee exciton (FE) by photoluminescence (PL) and the lattice parameter c by X- ray diffraction (XRD) measurements. (C) 2001 Elsevier Science B.V. All righ ts reserved.