Electrical properties of the Cu(In,Ga)Se-2/MoSe2/Mo structure

Authors
Kohara, N Nishiwaki, S Hashimoto, Y Negami, T Wada, T
Citation
N. Kohara et al., Electrical properties of the Cu(In,Ga)Se-2/MoSe2/Mo structure, SOL EN MAT, 67(1-4), 2001, pp. 209-215
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
209 - 215
Database
ISI
SICI code
0927-0248(200103)67:1-4<209:EPOTCS>2.0.ZU;2-F
Abstract
We investigated the electrical properties of the Cu(In,Ga)Se-2/MoSe2/Mo str ucture. CIGS/Mo heterocontact including the MoSe2 layer is not Schottky-typ e but a favorable ohmic-type contact by the evaluation of dark I-V measurem ent at low temperature. A characteristic peak at 870 nm is observed in diff erential quantum efficiency of a solar cell with a CIGS thickness of 0.5 mu m. This peak is considered with relating to the absorption of the MoSe2 lay er. The band gap of MoSe2 is calculated to be 1.41eV from the absorption pe ak. The band diagram is discussed on the basis of the electrical point of v iew. (C) 2001 Elsevier Science B.V. All rights reserved.