Preparation of Cu(In,Ga)Se, thin films from Cu-Se/In-Ga-Se precursors for high-efficiency solar cells

Authors
Nishiwaki, S Satoh, T Hayashi, S Hashimoto, Y Shimakawa, S Negami, T Wada, T
Citation
S. Nishiwaki et al., Preparation of Cu(In,Ga)Se, thin films from Cu-Se/In-Ga-Se precursors for high-efficiency solar cells, SOL EN MAT, 67(1-4), 2001, pp. 217-223
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
217 - 223
Database
ISI
SICI code
0927-0248(200103)67:1-4<217:POCTFF>2.0.ZU;2-H
Abstract
Improved preparation process of a device quality Cu(In,Ga)Se-2 (CIGS) thin film was proposed for production of CIGS solar cells. In-Ga-Se layer were d eposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu and Se fluxes to form Cu-Se/In-Ga-Se precursor film at substrate temperatu re of over 200 degreesC. The precursor film was annealed in Se Bur at subst rate temperature of over 500 degreesC to obtain high-quality CIGS film. The solar cell with a MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an effic iency of 17.5% (V-oc = 0.634V, J(sc) = 36.4mA/cm(2), FF = 0.756). (C) 2001 Elsevier Science B.V. All rights reserved.