S. Nishiwaki et al., Preparation of Cu(In,Ga)Se, thin films from Cu-Se/In-Ga-Se precursors for high-efficiency solar cells, SOL EN MAT, 67(1-4), 2001, pp. 217-223
Improved preparation process of a device quality Cu(In,Ga)Se-2 (CIGS) thin
film was proposed for production of CIGS solar cells. In-Ga-Se layer were d
eposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu
and Se fluxes to form Cu-Se/In-Ga-Se precursor film at substrate temperatu
re of over 200 degreesC. The precursor film was annealed in Se Bur at subst
rate temperature of over 500 degreesC to obtain high-quality CIGS film. The
solar cell with a MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an effic
iency of 17.5% (V-oc = 0.634V, J(sc) = 36.4mA/cm(2), FF = 0.756). (C) 2001
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