Performance improvement of CIGS-based modules by depositing high-quality Ga-doped ZnO windows with magnetron sputtering

Citation
Bs. Sang et al., Performance improvement of CIGS-based modules by depositing high-quality Ga-doped ZnO windows with magnetron sputtering, SOL EN MAT, 67(1-4), 2001, pp. 237-245
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
237 - 245
Database
ISI
SICI code
0927-0248(200103)67:1-4<237:PIOCMB>2.0.ZU;2-#
Abstract
Improvement of the performance of Cu(InGa)Se-2 (CICS)-based thin film submo dules by depositing high-quality ZnO:Ca (GZO) window layers with sputtering method is performed to aim for establishing deposition technology of GZO w indows of CIGS submodules. In order to reduce damage onto CIGS absorber/Zn( O,S,OH)(x) buffer interface due to the bombardment of high-energy particles during DC sputtering process of GZO window layers, growth of multilayered GZO window layers is developed. By using RF/DC/DC sputtered GZO window laye rs instead of the conventional DC sputtered GZO window layers, fill factor (FF) and conversion efficiency are increased over 10%. Increasing short-cir cuit current density (J(sc)) of CIGS submodules is also investigated by imp roving the transparency of GZO window layers. Furthermore, damp heat test o f the sputtered GZO films is carried out, and it is found that the GZO film s have good stability of electrical properties. (C) 2001 Elsevier Science B .V. All rights reserved.