High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In-S aqueous solution for high-efficiency CIGS s olar cells. The In-S aqueous solution contained InCl3 and CH3CSNH2 (thioace tamide). The In-S treatment modified the CIGS surface favorably for high-ef ficiency CIGS solar cells as evidenced by the increase in V-oc, J(sc) and F F. The In-S treatment formed thin CuInS2 layer on the CIGS surface which co ntributes to the high efficiency and stable performance of the CIGS solar c ell. The best cell showed an efficiency of 17.6% (V-oc = 0.649 V, J(sc) = 3 6.1 mA/cm(2) and FF = 75.1%) without any annealing and light soaking before I-V measurement. (C) 2001 Elsevier Science B.V. All rights reserved.