Cu(In,Ga)Se-2 thin-film solar cells with an efficiency of 18%

Authors
Negami, T Hashimoto, Y Nishiwaki, S
Citation
T. Negami et al., Cu(In,Ga)Se-2 thin-film solar cells with an efficiency of 18%, SOL EN MAT, 67(1-4), 2001, pp. 331-335
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
67
Issue
1-4
Year of publication
2001
Pages
331 - 335
Database
ISI
SICI code
0927-0248(200103)67:1-4<331:CTSCWA>2.0.ZU;2-A
Abstract
An efficiency of over 18% have been achieved in Cu(In,Ga)Se, (CIGS) thin-fi lm solar cells. Solar cell parameters were estimated for the cells with eff iciencies of more and less than 18%. A diode quality factor n and forward c urrent (saturated current) J(0) of the cell with over 18% efficiency are lo wer than those with below 18% efficiency. This would be attributed to suffi cient coverage of the CdS film with excellent uniformity as a buffer and/or window layer over the CIGS film because the process of CdS film formation was improved. (C) 2001 Elsevier Science B.V. All rights reserved.