A new method to build a high-voltage pulse supply using only semiconductorswitches for plasma-immersion ion implantation

Citation
Lm. Redondo et al., A new method to build a high-voltage pulse supply using only semiconductorswitches for plasma-immersion ion implantation, SURF COAT, 136(1-3), 2001, pp. 51-54
Citations number
4
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
136
Issue
1-3
Year of publication
2001
Pages
51 - 54
Database
ISI
SICI code
0257-8972(20010202)136:1-3<51:ANMTBA>2.0.ZU;2-9
Abstract
A new method to obtain high voltage (kV) pulses suitable for a plasma immer sion ion implantation (PIII) facility is presented. The circuit proposed is based on a step-up transformer with a constant flux reset clamp circuit th at takes advantage of the low duty ratio required to reduce the voltage str ess on all semiconductor switches. An initial prototype was assembled with 800-V semiconductor switches for an output pulse of -5 kV, 5-mus pulse widt h and 10-kHz pulse frequency. Theoretical and experimental results are pres ented and discussed. (C) 2001 Elsevier Science B.V. All rights reserved.