A plasma immersion implantation system for materials modification

A plasma immersion ion implantation (PIII) system is described which provid es the capability to bridge the range between research exploration and comm ercial applications for materials modification of electronic materials, wit h a particular focus on layer transfer processes. The Silicon Genesis PIII system is capable of operation at high plasma densities (approximate to 5 x 10(11) ions/cm(3) at the wafer) with high purity, mono-species ionization (> 99% H+ ions with a hydrogen plasma). The first generation of Silicon Gen esis PIII systems is equipped to use 200-mm wafers (through an automated lo adlock) and pulsed potentials up to 50 kV, Use of the mono-species ionizati on characteristic of the Silicon Genesis PIII system provides the capabilit y to precisely vary the characteristics of surface layers through implantat ion of atoms and damage creation at well-controlled depths in the materials of choice. The Silicon Genesis PIII system is designed for efficient produ ction of SOI and other layer transfer-generated materials and can be adapte d for materials modification of more complex structures and work pieces. (C ) 2001 Elsevier Science B.V. All rights reserved.