TiN coating and ion implantation of materials with three-dimensional topology in metal DC plasma-based ion implantation

Titanium ions were implanted into silicon substrates which adhered to the m aterial of three-dimensional shapes, such as trench and sphere, and the tit anium nitride films were deposited on the substrate by plasma-based ion imp lantation using a titanium vacuum are in nitrogen gas. The pulse voltage ap plied formed a nearly uniform implanted layer of titanium and nitrogen ions all over the surface of the materials of three-dimensional shape. The vari ation in thickness of the implanted layer with position was small compared to that of the deposited layer. For the parallel trench with a width of 16 mm, the maximum ratio of the thickness of the implanted layer was 2.5, wher eas that of the deposited layer amounted to 10. For the perpendicular trenc h, the thickness of the deposited and implanted layers on the inner sidewal l and bottom of the trench were not as small as those of the back and inner sidewall for the parallel trench. The thickness of the deposited and impla nted layers on the central partition of the double trench was not influence d by the existence of side partitions. (C) 2001 Elsevier Science B.V. All r ights reserved.