This work focuses on single layers and bilayers of p-sexiphenyl (PSP) and C
-60 grown by Hot Wall Epitaxy (HWE). A detailed study of the growth process
was performed on glass, ITO and mica substrates. Sexiphenyl on mica forms
a highly ordered anisotropic surface structure which was not observed for t
he other substrates by atomic force microscopy. Consequently, sexiphenyl la
yers grown on mica show much higher optical anisotropy (dichroic ratios up
to 14 in emission) in comparison with layers grown on glass. The crystallin
ity of the layers was investigated by X-ray diffraction (XRD), showing clea
r diffraction peaks for layers grown on mica. Bilayers show a strong quench
ing of the photoluminescence (PL) due to the ultrafast electron transfer to
C-60 (C) 2001 Published by Elsevier Science B.V.