High oriented epitaxial oligomer/fullerene structures grown by hot wall epitaxy

Citation
Ay. Andreev et al., High oriented epitaxial oligomer/fullerene structures grown by hot wall epitaxy, SYNTH METAL, 116(1-3), 2001, pp. 235-239
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
116
Issue
1-3
Year of publication
2001
Pages
235 - 239
Database
ISI
SICI code
0379-6779(20010115)116:1-3<235:HOEOSG>2.0.ZU;2-C
Abstract
This work focuses on single layers and bilayers of p-sexiphenyl (PSP) and C -60 grown by Hot Wall Epitaxy (HWE). A detailed study of the growth process was performed on glass, ITO and mica substrates. Sexiphenyl on mica forms a highly ordered anisotropic surface structure which was not observed for t he other substrates by atomic force microscopy. Consequently, sexiphenyl la yers grown on mica show much higher optical anisotropy (dichroic ratios up to 14 in emission) in comparison with layers grown on glass. The crystallin ity of the layers was investigated by X-ray diffraction (XRD), showing clea r diffraction peaks for layers grown on mica. Bilayers show a strong quench ing of the photoluminescence (PL) due to the ultrafast electron transfer to C-60 (C) 2001 Published by Elsevier Science B.V.