Raman scattering study of electrochemically doped single wall nanotubes

Citation
Cp. An et al., Raman scattering study of electrochemically doped single wall nanotubes, SYNTH METAL, 116(1-3), 2001, pp. 411-414
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
116
Issue
1-3
Year of publication
2001
Pages
411 - 414
Database
ISI
SICI code
0379-6779(20010115)116:1-3<411:RSSOED>2.0.ZU;2-7
Abstract
Sheets of single wall carbon nanotubes (SWNT) bundles were studied by Raman scattering spectroscopy when doped electrochemically in an aqueous NaCl so lution. At non-resonant conditions, the radial breathing mode (RBM) and tan gential displacement modes (TDM) change very little intensity and frequency with electrochemical doping. Resonant Raman scattering for the TDM band, h owever, show large changes when applying or negative voltages. We conclude that the electronic resonance condition disappears due to larger change of the electronic occupancy with electrochemical doping. (C) 2001 Elsevier Sci ence B.V. All rights reserved.