Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity

Authors
Vlasenko, LS Gorelenok, AT Emtsev, VV Kamanin, AV Kokhanovskii, SI Poloskin, DS Shmidt, NM
Citation
Ls. Vlasenko et al., Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity, TECH PHYS L, 27(1), 2001, pp. 9-10
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
1
Year of publication
2001
Pages
9 - 10
Database
ISI
SICI code
1063-7850(2001)27:1<9:DOHGWB>2.0.ZU;2-L
Abstract
It is demonstrated that the method of microwave photoconductivity developed previously for the study of ultrapure Si can be successfully employed in t he qualitative diagnostics of pure high-resistivity GaAs. Data on the micro wave photoconductivity of GaAs are in good agreement with the results of me asurements of the Hall effect, C-V characteristics, and low-temperature pho toluminescence. (C) 2001 MAIK "Nauka/ Interperiodica".