High-quality ZnO/GaN/alpha-Al2O3 heteroepitaxial structures grown by CVD

Authors
Ataev, BM Kamilov, IK Lundin, WV Mamedov, VV Omaev, AK Shakhshaev, SMO
Citation
Bm. Ataev et al., High-quality ZnO/GaN/alpha-Al2O3 heteroepitaxial structures grown by CVD, TECH PHYS L, 27(1), 2001, pp. 55-57
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
1
Year of publication
2001
Pages
55 - 57
Database
ISI
SICI code
1063-7850(2001)27:1<55:HZHSGB>2.0.ZU;2-B
Abstract
The first results on the preparation of (0001)ZnO/(0001)GaN/(0001)alpha -Al 2O3 heteroepitaxial structures by CVD in a low-pressure flow-type reactor a re reported. Study of the surface morphology and X-ray diffraction patterns showed high structural perfection of the zinc oxide layer, with a block mi sorientation in the basal plane not exceeding 21('). The photoluminescence spectra of samples exhibited dominating emission in the exciton region. (C) 2001 MAIK "Nauka/Interperiodica".