Single semicircular response of dielectric properties of diamond films

Citation
Ht. Ye et al., Single semicircular response of dielectric properties of diamond films, THIN SOL FI, 381(1), 2001, pp. 52-56
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
381
Issue
1
Year of publication
2001
Pages
52 - 56
Database
ISI
SICI code
0040-6090(20010102)381:1<52:SSRODP>2.0.ZU;2-T
Abstract
Diamond films were synthesized by a microwave plasma-enhanced chemical vapo r deposition method using H-2/CH4 gas mixtures. A Fluke PM6306 RCL Meter wa s used to study the dielectric properties of the diamond films deposited. T he dielectric dispersion measurement yielded the real and imaginary parts o f impedance of diamond films in the form of a depressed semicircle in a com plex plane. A Cole-Cole plot was observed at frequencies from 50 Hz to 1 MH z. The result was found to fit the theoretical resistor-capacitor parallel circuit model. The structure and quality of diamond films were analyzed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. (C) 2001 Elsevier Science B.V. All rights reserved.