Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000)

In this contribution we report on the application of the sublimation molecu lar beam epitaxy (MBE) method to grow efficient light emitting Si:Er struct ures as well the extension of this method to grow waveguiding Si1-xGex laye rs. The formation processes of optically active Er centers in sublimation M BE grown materials and their properties are discussed. We distinguish the f ollowing optically effective Er centers in these materials: the oxygen-rela ted Er-1 center, specific for sublimation MBE layers, a carbon- related cen ter, SiO2-precipitate like centers and a variety of oxygen-related centers with low symmetry. The effect of the increase of photoluminescence efficien cy in selectively doped structures, namely, in periodic multilayer Si-Si:Er /Si structures, has been discovered. (C) 2001 Elsevier Science B.V. All rig hts reserved.