Monte-Carlo calculation of X-ray dose enhancement factor nearby high Z metal connected interface

Authors
Mu, WB Chen, PX
Citation
Wb. Mu et Px. Chen, Monte-Carlo calculation of X-ray dose enhancement factor nearby high Z metal connected interface, ACT PHY C E, 50(2), 2001, pp. 189-192
Citations number
4
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
50
Issue
2
Year of publication
2001
Pages
189 - 192
Database
ISI
SICI code
1000-3290(200102)50:2<189:MCOXDE>2.0.ZU;2-O
Abstract
The dose would be enhanced on the low-Z material side when X-ray enters the interface constructed with two different materials. The mechanism of dose enhancement has been discussed and the Dose Enhancement Factors of W-Si,W-S iO2,Ta-Si; and Ta-SiO2 interfaces are calculated by the Monte-Carlo method.