Epitaxial growth of (0001) oriented 6H-SiC films on Si(111) substrate by organic sol-gel film annealing

SiC films were prepared on Si(lll) substrates by annealing polystyrene gel films at temperature 950 degreesC in vacuum (10(-3) Pa). Fourier transform infrared spectroscopy(FTIR), X-ray diffraction(XRD), Transmission electron microscopy (TEM). Raman scattering and X-ray photoelectron spectroscopy(XPS ) were used to study the morphology of the surface, crystal structure. comp osition and chemical state of the element of the SiC films. It revealed tha t the films consisted of preferentially oriented crystalline 6H-SiC epilaye r which grew along(0001) planes parallel to Si(lll) planes. The ratio of Si to C was about 1 and there were some carbon and oxide contaminant species in the form of CH, CO and Si2O3 along with a small amount of adsorptive oxi de at the surface of the films. The polycrystalline grains in the films gre w cylindrically along c axis. Their maximum size was about 150nm. The film was smooth. dense and uniform with a thickness of about 0.3 mum It was foun d that covering the polystyrene film with a Si plate could increase the qua ntity of SiC during annealing.