Structural modification of single-axis-oriented yttria-stabilized-zirconiafilms under zirconium ion bombardment

Citation
Aa. Voevodin et al., Structural modification of single-axis-oriented yttria-stabilized-zirconiafilms under zirconium ion bombardment, APPL PHYS L, 78(6), 2001, pp. 730-732
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
6
Year of publication
2001
Pages
730 - 732
Database
ISI
SICI code
0003-6951(20010205)78:6<730:SMOSY>2.0.ZU;2-T
Abstract
Crystal size and orientation control of yttria-stabilized-zirconia (YSZ) fi lms produced by pulsed-laser deposition under zirconium-ion bombardment are reported. A structure development mechanism is proposed based on the corre lation between ablated plasma chemistry, velocity distributions of atomic a nd molecular species in the plasma, bombardment energy, time, incidence ang le, film crystal size, and orientation. A near-room-temperature growth of s ingle-axis-oriented YSZ films with (002) texture on randomly oriented polyc rystalline substrates is demonstrated. (C) 2001 American Institute of Physi cs.