Citation
Hn. Aiyer et al., Improved performance of amorphous silicon thin film transistors by cyanidetreatment, APPL PHYS L, 78(6), 2001, pp. 751-753
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
78
Issue
6
Year of publication
2001
Pages
751 - 753
Database
ISI
SICI code
0003-6951(20010205)78:6<751:IPOAST>2.0.ZU;2-0
Abstract
We have examined the impact of a simple, wet chemical postgrowth treatment
of "immersing in KCN solution" on the performance of inverted staggered amo
rphous silicon n-channel thin film transistors. Results show that the cyani
de treatment significantly improves the overall transistor performance by t
he elimination of defect states. (C) 2001 American Institute of Physics.