Self-assembled Fe nanowires using organometallic chemical vapor depositionand CaF2 masks on stepped Si(111)

Authors
Lin, JL Petrovykh, DY Kirakosian, A Rauscher, H Himpsel, FJ Dowben, PA
Citation
Jl. Lin et al., Self-assembled Fe nanowires using organometallic chemical vapor depositionand CaF2 masks on stepped Si(111), APPL PHYS L, 78(6), 2001, pp. 829-831
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
6
Year of publication
2001
Pages
829 - 831
Database
ISI
SICI code
0003-6951(20010205)78:6<829:SFNUOC>2.0.ZU;2-G
Abstract
Linear arrays of 3 nm wide Fe stripes with 15 nm spacing are fabricated by self-assembly. They are formed by photolysis of ferrocene that is selective ly adsorbed between CaF2 stripes. An ultraviolet nitrogen laser removes the organic ligands from ferrocene. Arrays of CaF2 stripes serve as masks, whi ch are self-assembled on a stepped Si(111) surface. Scanning tunneling micr oscopy is used to investigate the surface morphology during growth. A gener alization of this method to other wire materials is discussed. (C) 2001 Ame rican Institute of Physics.