Ion-assisted deposition of amorphous GaN: Raman and optical properties

Citation
A. Bittar et al., Ion-assisted deposition of amorphous GaN: Raman and optical properties, APPL PHYS L, 78(5), 2001, pp. 619-621
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
5
Year of publication
2001
Pages
619 - 621
Database
ISI
SICI code
0003-6951(20010129)78:5<619:IDOAGR>2.0.ZU;2-C
Abstract
We report the preparation of amorphous GaN by ion-assisted deposition and s tudies of the Raman and optical response of the resulting films. The films are transparent across the visible and show an edge whose energy and struct ure are in close agreement with crystalline material, suggesting a low dens ity of gap states and homopolar bonds. The Raman spectrum is similar to a b roadened vibrational density of modes calculated for wurtzite GaN, with a R aman cross section which varies among the vibrational bands. (C) 2001 Ameri can Institute of Physics.