Imaging layers for 50 kV electron beam lithography: Selective displacementof noncovalently bound amine ligands from a siloxane host film

We report the development of an imaging layer technology for 50 kV electron -beam lithography based upon the displacement of noncovalently bound amine ligands from a siloxane host film. The patterned films were used as templat es for the selective deposition of an electroless nickel film resulting in a positive tone imaging mechanism. The deposited nickel was sufficiently ro bust to function as an etch mask for pattern transfer by reactive ion etchi ng. Metallized and etched patterns with linewidths to approximately 40 nm a re demonstrated using an exposure dose of 500 muC/cm(2). (C) 2001 American Institute of Physics.