Electronic structure of bismuth molybdenum oxide single crystal Bi0.19MoO3

Single crystal Bi0.19MoO3 has been grown by fused salt electrolytic techniq ue. X-ray powder diffraction shows that the unit cell parameters are: a=1.9 985nm, b=0.4085nm and c=1.4437nm. The temperature dependence of resistivity demonstrates a semiconductor characteristic. X-ray photoemission spectrosc opy studies provide that the valence band of Bi0.19MoO3 are made up of oxyg en p(pi) and the pi*, pi and sigma bonding bands formed by orbital combinat ion. The shoulder at 0.4 eV near the top of valence band may be formed from the non-bonding d(xy), orbitals of some Mo atoms. The Ols core-electron sp ectrum reveals the presence of two inequivalent bonds of oxygen ions in Bi0 .19MoO3 Bi4f core-level spectrum shows two bonding characters of Bi atoms i n bismuth molybdenum oxide single crystals. core-level spectrum could be de composed into two kinds of valence states of molybdenum(Mo+5 and Mo+6).