Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers

Authors
Larson, MC Coldren, CW Spruytte, SG Petersen, HE Harris, JS
Citation
Mc. Larson et al., Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers, IEEE PHOTON, 12(12), 2000, pp. 1598-1600
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
12
Year of publication
2000
Pages
1598 - 1600
Database
ISI
SICI code
1041-1135(200012)12:12<1598:LOGLWV>2.0.ZU;2-9
Abstract
We report, for the first time, room temperature continuous-wave (CW) operat ion of GaInNAs vertical-cavity surface-emitting laser diodes emitting at a wavelength of 1.2 mum and grown all-epitaxially in a single step on a GaAs substrate, Oxide-apertured devices demonstrated CW threshold currents as lo w as 1 mA, slope efficiency above 0.045 W/A, and thermal impedance of 1.24 K/mW. Larger sized devices exhibited pulsed threshold current density of 2- 2.5 kA/cm(2) and slope efficiency above 0.09 W/A.