Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors

Authors
Qasaimeh, O Zhou, WD Bhattacharya, P Huffaker, D Deppe, D
Citation
O. Qasaimeh et al., Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors, IEEE PHOTON, 12(12), 2000, pp. 1683-1685
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
12
Year of publication
2000
Pages
1683 - 1685
Database
ISI
SICI code
1041-1135(200012)12:12<1683:MILPIM>2.0.ZU;2-K
Abstract
A low power GaAs-based monolithically integrated phototransceiver, consisti ng of a high gain phototransistor and a microcavity light-emitting diode, i s demonstrated. The input and output wavelengths are 0.85 and 0.98 mum, res pectively. The phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 muW for an input power of 1.5 muW The small signal modul ation bandwidth is 80 MHz.